MRF6S24140HR3 MRF6S24140HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
?
Typical CW Performance at 2450 MHz, VDD
=28Volts,IDQ
= 1200 mA,
Pout
= 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
?C
Case Operating Temperature
TC
150
?C
Operating Junction Temperature
(1,2)
TJ
225
?C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 82?C, 140 W CW
Case Temperature 75?C, 28 W CW
R?JC
0.29
0.33
?C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6S24140H
Rev. 4, 2/2012
Freescale Semiconductor
Technical Data
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--03
NI--880S
MRF6S24140HSR3
CASE 465B--04
NI--880
MRF6S24140HR3
?
Freescale Semiconductor, Inc., 2007--2010, 2012.
All rights reserved.
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